2N5088 Datasheet, PDF (2/4 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
2N5088/89
Min
Max UNITS
DC Current Gain
hFE
IC=100uA,VCE=5V 2N5088
300
900
2N5089
400
1200
IC=1mA,VCE=5V
2N5088
350
-
2N5089
450
-
IC=10mA,VCE=5V* 2N5088
300
2N5089
400
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1.0mA
-
Base Emitter on Voltage
VBE(on) * IC=10mA,VCE=5V
-
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
ft
IC=500uA,VCE=5V
>50
f=20MHz
Collector-Base Capacitance
Ccb
VCB=5V, f=100kHz
-
Emitter-Base Capacitance
Ceb
VEB=0.5V, f=100kHz
-
Small Signal Current Gain
hfe
IC=1mA, VCE=5V
2N5088
350
f=1kHz
2N5089
450
-
-
0.5
0.8
-
<4.0
<10
1400
1800
V
V
MHz
pF
pF
Noise Figure
NF
IC=100uA, VCE=5V, 2N5088
-
Rs=10kohms, f=10Hz 2N5089
-
to 15.7 kHz
*Pulsed: pulse Duration =300us, Duty Cycle=2%
(1)Rth (j-a) is measured with the device soldered into a typical printed circuit board.
3.0
dB
2.0
dB
Continental Device India Limited
Data Sheet
Page 2 of 4