2N5088 Datasheet, PDF (1/4 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTORS
2N5088
2N5089
TO-92
CBE
EBC
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N5088
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCE0
30
Emitter -Base Voltage
VEBO
Collector Current- Continuous
IC
Power Dissipation@ Ta=25 deg C PD
Derate Above 25 deg C
Power Dissipation@ Tc=25 deg C PD
Derate Above 25 deg C
Junction Temperature
Tj
Storage Temperature
Tstg
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a) (1)
Junction to Case
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
VCEO* IC=1mA, IB=0
2N5088
2N5089
4.5
50
625
5.0
1.5
12
150
-55 to +150
357
125
Min
30
25
2N5089 UNITS
30
V
25
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
deg C
deg C/W
deg C/W
Max UNITS
-
V
-
V
Collector -Base Voltage
VCBO IC=100uA,IE=0
2N5088
35
-
V
2N5089
30
-
V
Collector-Cut off Current
ICBO
VCB=20V, IE=0
VCB=15V, IE=0
2N5088
-
2N5089
-
50
nA
50
nA
Emitter-Cut off Current
IEBO
VEB=3.0V, IC=0
VEB=4.5V, IC=0
2N5088
-
2N5089
-
50
nA
100
nA
Continental Device India Limited
Data Sheet
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