2N4400 Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)

2N4400, 2N4401
2N4402, 2N4403
Characteristic
Collector Emitter Voltage
I_C=1mA, I_B=0
Collector Base Voltage
I_C=100µA, I_E=0
Emitter Base Voltage
I_E=100µA, I_C=0
Base Cutoff Current
V_CE=35V, V_BE=0.4V
Collector Cutoff Current
V_CE=35V, V_BE=0.4V
Collector-Emitter
Saturation Voltage
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
Base-Emitter
Saturation Voltage
I_C=150mA, I_B=15mA
I_C=500mA,I_B=50mA
Symbol 2N4400/01 2N4402/03
BV_CEO*
BV_CBO
BV_EBO
I_BEV
I_CEX
>40
>60
>6
<0.1
<0.1
>40
>40
>5
<0.1
<0.1
Unit
V
V
V
µA
µA
V_{CE (sat)}*
<0.4
<0.75
<0.4
V
<0.75 V
V_{BE (sat)}*
0.75 to 0.95 0.75 to 0.95
V
<1.2
<1.3
V
Characteristic
D C Current Gain
I_C=0.1mA,V_CE=1V
I_C=1mA,V_CE=1V
I_C=10mA,V_CE=1V
I_C=150mA,V_CE=1V*
I_C=150mA,V_CE=2V*
I_C=500mA,V_CE=2V*
Symbol 2N4400 2N4401 2N4402 2N4403 Unit
h_FE
-
>20
- >30
>20
>40
>30 >60
>40
>80
>50 >100
50-150 100-300
-
-
-
- 50-150 100-300
>20
>40
>20 >20
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
I_C=1mA, V_CE=10V, f=1KHz h_fe
Input Impedance
I_C=1mA, V_CE=10V, f=1KHz h_ie
20-250 40-500 30-250 60-500
0.5-7.5 1.0-15 0.75-7.5 1.5-15 KΩ
Continental Device India Limited
Data Sheet
Page 2 of 6