2N4400 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-92 Plastic Package
2N4400, 2N4401
2N4402, 2N4403
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
123
1 = EMITTER
2 = BASE
3 = COLLECTOR
E^BC
DIM MIN
MAX
A
4,32
5,33
B
4,45
5,20
C
3,18
4,19
D
0,41
0,55
E
0,35
0,50
F
5 DEG
G
1,14
1,40
H
1,14
1,53
K
12,70 –
L
1.982 2.082
ALL DIMENSIONS IN M.M.
ABSOLUTE MAXIMM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation At Ta=25 ºC
Derate Above 25 ºC
Power Dissipation At Tc=25 ºC
Derate Above 25 ºC
Operating & Storage
Junction Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j,T_stg
2N4400/01
40
2N4402/03 Units
40 V
60
40 V
6
5V
- 600
- mA
- 625
- mW
- 5.0
- mW/ºC
- 1.5
-W
-
12
- mW/ºC
-55 to +150
ºC
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
- 83.3 -
Junction to Ambient
R_{th (j-a)}
- 200
-
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 6