2N4030 Datasheet, PDF (2/4 Pages) Micro Electronics – PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031
2N4032, 2N4033
TO-39
Metal Can Package
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Saturation Voltage V_CE(Sat) * I_C=150mA,I_B=15mA
I_C=500mA,I_B=50mA
2N4030, 4032
I_C=1A,I_B=100mA
Base Emitter Saturation Voltage
V_BE(Sat) * I_C=150mA,I_B=15mA
Base Emitter on Voltage
V_BE(on) * I_C=500mA, V_CE=0.5V
2N4030, 4032
I_C=1A, V_CE=1V
DC Current Gain
2N4030, 4031 h_FE* I_C=100mA, V_CE=5V
30
2N4032, 4033
75
2N4030, 4031
I_C=100mA,V_CE=5V
40
2N4032, 4033
100
2N4030, 4031
I_C=500mA,V_CE=5V
25
70
2N4030, 4031
I_C=100mA,V_CE=5V,
15
2N4032, 4033
Ta=-55ºC
40
2N4030
I_C=1A, V_CE=5V
15
2N4031
10
2N4032
40
2N4033
25
SMALL SIGNAL CHARACTERISTICS
Trasition Frequnecy
f_T
2N4030, 4031
I_C=50mA, V_CE=10V,
100
2N4032, 4033
f=100MHz
150
Output Capacitance
C_ob V_CB=10V,I_E=0,f=1MHz
Input Capacitance
Turn on Time
Storage Time
Fall Time
C_ib V_BE=0.5V,I_C=0,f=1MHz
t_on I_C=500mA, I_B1=50mA
ton I_C=500mA, I_B1=I_B2=50mA
t_f I_C=500mA,I_BI=I_B2=50mA
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
0.15
0.5
1.0
0.9
1.1
1.2
120
300
400
500
20
110
100
350
50
UNITS
V
V
V
V
V
V
MHz
MHz
pF
pF
nS
nS
nS
Continental Device India Limited
Data Sheet
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