2N4030 Datasheet, PDF (1/4 Pages) Micro Electronics – PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031
2N4032, 2N4033
TO-39
Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE
AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N4030,32
Collector Emitter Voltage
V_CEO
60
Collector Base Voltage
V_CBO
60
Emitter Base Voltage
V_EBO
Collector Current
I_CM
Power Dissipation @ Ta=25ºC
P_D
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
2N4031, 33
80
80
5
1
800
4.6
4
22.85
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter BreakdownVoltage BV_CEO* I_C=10mA,I_B=0
2N4030, 4032
60
2N4031, 4033
80
MAX
Collector Base Breakdown Voltage
BV_CBO I_C=10µA, I_E =0
2N4030, 4032
60
2N4031, 4033
80
Emitter Base Breakdown Voltage
BV_EBO I_E=10µA, I_C =0
5
Collector Leakage Current
I_CBO V_CB=50V, I_E=0
2N4030, 4032
50
2N4030, 4032
V_CB=50V, T_A=150ºC
50
2N4031, 4033
V_CB=60V, I_E=0
50
2N4031, 4033
V_CB=60V, T_A=150ºC
50
Emitter Leakage Current
I_EBO V_EB=5V, I_C=0
10
UNITS
V
V
V
A
mW
mW/ºC
W
mW/ºC
ºC
UNITS
V
V
V
V
V
nA
µA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4