CAT28LV256 Datasheet, PDF (4/10 Pages) Catalyst Semiconductor – 256K-Bit CMOS PARALLEL E2PROM

CAT28LV256
D.C. OPERATING CHARACTERISTICS
VCC = 3.0V to 3.6V, unless otherwise specified
Symbol
ICC
Parameter
Min.
VCC Current (Operating, TTL)
Limits
Typ. Max.
15
Units
mA
ISBC(2)
VCC Current (Standby, CMOS)
150 µA
ILI
Input Leakage Current
–1
ILO
Output Leakage Current
–5
1
µA
5
µA
VIH(2)
VIL
VOH
VOL
VWI
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
2
–0.3
2
2
VCC +0.3 V
0.6
V
V
0.3
V
V
Test Conditions
CE = OE = VIL,
f = 1/tRC min, All I/O’s Open
CE = VIHC,
All I/O’s Open
VIN = GND to VCC
VOUT = GND to VCC,
CE = VIH
IOH = –100µA
IOL = 1.0mA
A.C. CHARACTERISTICS, Read Cycle
VCC = 3.0V to 3.6V, unless otherwise specified
Symbol
tRC
tCE
tAA
tOE
tLZ(1)
tOLZ(1)
tHZ(1)(3)
tOHZ(1)(3)
tOH(1)
Parameter
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
28LV256-20 28LV256-25 28LV256-30
Min. Max. Min. Max. Min. Max. Units
200
250
300
ns
200
250
300 ns
200
250
300 ns
80
100
110 ns
0
0
0
ns
0
0
0
ns
50
55
60 ns
50
55
60 ns
0
0
0
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) V_IHC = V_CC –0.3V to V_CC +0.3V.
(3) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Doc. No. 25040-00 4/01 P-1
4