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CAT28C257_04 Datasheet, PDF (4/12 Pages) Catalyst Semiconductor – 256K-Bit CMOS PARALLEL EEPROM
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CAT28C257
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
L
H
DIN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Conditions
Min
Typ
Max
Units
CI/O(1)
Input/Output Capacitance
VI/O = 0V
10
pF
CIN(1)
Input Capacitance
VIN = 0V
6
pF
A.C. CHARACTERISTICS, Read Cycle
VCC=5V + 10%, Unless otherwise specified
Symbol Parameter
tRC Read Cycle Time
tCE CE Access Time
tAA
tOE
tLZ(1)
tOLZ(1)
tHZ(1)(2)
tOHZ(1)(2)
tOH(1)
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
28C257-12
Min Typ Max
120
120
120
50
0
0
50
50
0
28C257-15
Min Typ Max
150
150
150
70
0
0
50
50
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Power-Up Timing
Symbol Parameter
tPUR Power-Up to Read
tPUW Power-Up to Write
Min
Typ
Max
100
5
10
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Units
µs
ms
Doc. No. 1015, Rev. D
4
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