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| CAT93C66_07 Datasheet, PDF (3/17 Pages) Catalyst Semiconductor – 4-Kb Microwire Serial CMOS EEPROM | |||
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CAT93C66
D.C. OPERATING CHARACTERISTICS (MATURE PRODUCT, DIE REV. E â Not Recommended for New
Designs)
VCC = +1.8V to +5.5V, unless otherwise specified.
Symbol
ICC1
ICC2
ISB1
ISB2
ILI
ILO
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL2
VOH2
Parameter
Power Supply Current (Write)
Power Supply Current (Read)
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
fSK = 1MHz, VCC = 5.0V
fSK = 1MHz, VCC = 5.0V
VIN = GND or VCC, CS = GND
ORG = GND
VIN = GND or VCC, CS = GND
ORG = Float or VCC
VIN = GND to VCC
VOUT = GND to VCC, CS = GND
4.5V ⤠VCC < 5.5V
4.5V ⤠VCC < 5.5V
1.8V ⤠VCC < 4.5V
1.8V ⤠VCC < 4.5V
4.5V ⤠VCC < 5.5V, IOL = 2.1mA
4.5V ⤠VCC < 5.5V, IOH = -400µA
1.8V ⤠VCC < 4.5V, IOL = 1mA
1.8V ⤠VCC < 4.5V, IOH = -100µA
Min
Max Units
3
mA
500
µA
10
µA
10
µA
1
µA
1
µA
-0.1
0.8
V
2
VCC + 1
V
0
VCC x 0.2 V
VCC x 0.7 VCC + 1
V
0.4
V
2.4
V
0.2
V
VCC - 0.2
V
PIN CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 5V
Symbol
COUT(1)
CIN(1)
Test
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Conditions Min
VOUT = 0V
VIN = 0V
Typ Max Units
5
pF
5
pF
Notes:
(1) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
© 2007 Catalyst Semiconductor, Inc.
3
Characteristics subject to change without notice
Doc. No. 1089 Rev. P
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