CAT660_07 Datasheet, PDF (3/16 Pages) Catalyst Semiconductor – 100mA CMOS Charge Pump Inverter/Doubler

CAT660
ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (TA = 70°C)
Plastic DIP ................................................ 730mW
SOIC ......................................................... 500mW
TDFN ............................................................... 1W
Storage Temperature ......................... -65°C to 160°C
Lead Soldering Temperature (10 sec) ............. 300°C
Note: TA = Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Operating Ambient Temperature Range
CAT660E .............. -40°C to 85°C
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150µF, Boost/FC = Open, C_OSC = 0pF, inverter mode with test circuit as shown in Figure 1 unless
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.
Parameter
Supply Voltage
Supply Current
Symbol
VS
IS
Conditions
Inverter: LV = Open. R_L = 1kΩ
Inverter: LV = GND. R_L = 1kΩ
Doubler: LV = OUT. R_L = 1kΩ
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
Min Typ Max Units
3.0
5.5
V
1.5
5.5
2.5
5.5
0.09 0.5 mA
0.3
3
Output Current
Output Resistance
IOUT
RO
Oscillator Frequency FOSC
(Note 3)
OSC Input Current IOSC
Power Efficiency
PE
Voltage Conversion VEFF
Efficiency
OUT is more negative than -4V
100
mA
I_L = 100mA, C1 = C2 = 150 µF (Note 2)
BOOST/FC = V+ (C1, C2 ESR ≤ 0.5Ω)
4
7
Ω
I_L = 100mA, C1 = C2 = 10 µF
12
BOOST/FC = Open
5
10
kHz
BOOST/FC = V+
40 80
BOOST/FC = Open
BOOST/FC = V+
±1
µA
±5
R_L = 1kΩ connected between V+ and
96 98
%
OUT, T_A = 25°C (Doubler)
R_L = 500Ω connected between GND and
92
96
OUT, T_A = 25°C (Inverter)
I_L = 100mA to GND, T_A = 25°C (Inverter)
88
No load, T_A = 25°C
99 99.9
%
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150µF and have 0.2Ω maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note 2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2Ω.
Note 3. FOSC is tested with COSC = 100pF to minimize test fixture loading. The test is correlated back to COSC=0pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external COSC.
3
Doc. No. MD-5000, Rev. W