CAT28F001_05 Datasheet, PDF (1/18 Pages) Catalyst Semiconductor – 1 Megabit CMOS Boot Block Flash Memory

CAT28F001
1 Megabit CMOS Boot Block Flash Memory
FEATURES
Licensed Intel
second source
ALOGEN ^FR
LEA _{D F REETM}
I Fast Read Access Time: 90/120 ns
I On-Chip Address and Data Latches
I Blocked Architecture
— One 8 KB Boot Block w/ Lock Out
• Top or Bottom Locations
— Two 4 KB Parameter Blocks
— One 112 KB Main Block
I Low Power CMOS Operation
I 12.0V ± 5% Programming and Erase Voltage
I Automated Program & Erase Algorithms
I High Speed Programming
I Commercial, Industrial and Automotive
Temperature Ranges
I Deep Powerdown Mode
— 0.05 µA I_CC Typical
— 0.8 µA I_PP Typical
I Hardware Data Protection
I Electronic Signature
I 100,000 Program/Erase Cycles and 10 Year
Data Retention
I JEDEC Standard Pinouts:
— 32 pin DIP
— 32 pin PLCC
— 32 pin TSOP
I Reset/Deep Power Down Mode
I "Green" Package Options Available
DESCRIPTION
The CAT28F001 is a high speed 128K X 8 bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after sale
code updates.
The CAT28F001 has a blocked architecture with one 8
KB Boot Block, two 4 KB Parameter Blocks and one 112
KB Main Block. The Boot Block section can be at the top
or bottom of the memory map and includes a reprogram-
ming write lock out feature to guarantee data integrity. It
is designed to contain secure code which will bring up
the system minimally and download code to other loca-
tions of CAT28F001.
The CAT28F001 is designed with a signature mode
which allows the user to identify the IC manufacturer and
device type. The CAT28F001 is also designed with on-
Chip Address Latches, Data Latches, Programming and
Erase Algorithms.
The CAT28F001 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, PLCC or TSOP packages.
BLOCK DIAGRAM
WRITE STATE
MACHINE
RP
WE
COMMAND
REGISTER
ADDRESS
COUNTER
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
I/O0–I/O7
I/O BUFFERS
DATA
LATCH
STATUS
REGISTER
SENSE
AMP
CE
OE
A0–A16
VOLTAGE VERIFY
SWITCH
Y-DECODER
X-DECODER
Y-GATING
8K-BYTE BOOT BLOCK
4K-BYTE PARAMETER BLOCK
4K-BYTE PARAMETER BLOCK
112K-BYTE MAIN BLOCK
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1078, Rev. I