CM1215 Datasheet, PDF (4/10 Pages) California Micro Devices Corp – 1-, 2- and 4-Channel Low Capacitance ESD Arrays

PRELIMINARY
CM1215
Specifications (cont’d)
SYMBOL
V_P
ELECTRICAL OPERATING CHARACTERISTICS ^{NOTE 1}
PARAMETER
Operating Supply Voltage (V_P-V_N)
CONDITIONS
MIN
TYP
3.3
I_P
Operating Supply Current
(V_P-V_N) = 3.3V
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_F = 20mA; T_A = 25°C
0.6
0.8
0.6
0.8
I_LEAK
Channel Leakage Current
T_A = 25°C; V_P = 5V,
V_N = 0V
±0.1
C_IN
Channel Input Capacitance
At 1 MHz, V_P = 3.3V,
1.6
V_N = 0V, V_IN = 1.65V;
Note2
ΔC_IN
Channel I/O to GND Capacitance Note 2
0.04
Difference
C_MUTUAL Mutual Capacitance
(V_P-V_N) = 3.3V; Note 2
0.13
V_ESD
ESD Protection
Notes 2, 3, and 4;
Peak Discharge Voltage at any T_A = 25°C
±15
channel input, in system, contact
discharge per IEC 61000-4-2
standard
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20μS;
T_A=25°C; Notes 2
V_P+1.5
V_N-1.5
R_DYN
Dynamic Resistance
I_PP = 1A, t_P = 8/20μS;
Positive transients
Negative transients
T_A = 25°C;
Notes 2
0.4
0.4
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 4: From I/O pins to V_P or V_N only. V_P bypassed to V_N with low ESR 0.2μF ceramic capacitor.
MAX
5.5
8
0.95
0.95
±1.0
2.0
UNIT
V
μA
V
V
μA
pF
pF
pF
kV
V
V
Ω
Ω
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4 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: [phone] ● Fax: [phone] ● www.calmicro.com 06/30/05