CM1209 Datasheet, PDF (4/9 Pages) California Micro Devices Corp – 4,6 & 8 Channel ESD Protection Arrays with Zener Supply Clamp

Specifications (cont’d)
CM1209
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
MIN
I_P
Supply Current
(V_P-V_N)=5.5V; T_A=25°C
V_F
ESD Diode Forward Voltage
I_F = 20mA; T_A=25°C
0.65
V_ZBD
Zener Clamp Reverse Breakdown
Voltage
At 1mA; T_A=25°C
I_LEAK Channel Leakage Current
T_A=25°C
C_IN
Channel Input Capacitance
At 1 MHz, V_P=5V, via 10K;
V_N=0V, V_IN=2.5V;
Notes 2 and 6
V_ESD
ESD Protection
Peak Discharge Voltage at any
channel input and V_P rail
Contact discharge per
Notes 2, 3, 5, and 6
+15
IEC 61000-4-2 standard
Air discharge per
Notes 2, 3, 5, and 6
+15
IEC 61000-4-2 standard
V_CL Channel Clamp Voltage
Positive Transients
Negative Transients
At 8kV ESD HBM;
T_A=25°C; Notes 2, 4 and 6
Z_POS
Dynamic Resistance of Channel Input I = 1A; T_A=25°C; See
for Positive Transients
Figure 2; Note 6 applies
Z_NEG
Dynamic Resistance of Channel Input I = 1A; T_A=25°C; See
for Negative Transients
Figure 2; Note 6 applies
TYP
7
+0.1
6
+12.5
- 5.1
0.70
0.45
MAX
10
0.95
UNITS
µA
V
V
+1.0
µA
8
pF
kV
kV
V
V
Ω
Ω
Note 1: All parameters specified at T_A=-40 to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to V_P or V_N only.
Note 4: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 5.0V, V_N grounded.
Note 5: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 5.0V, V_N grounded.
Note 6: These measurements performed with no external capacitor on V_P..
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01/09/04