CM1410 Datasheet, PDF (3/7 Pages) California Micro Devices Corp – 4 Channel Headset EMI Filter with ESD Protection

CM1410
Specifications
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
100
400
UNITS
°C
mW
mW
PARAMETER
Operating Temperature Range
STANDARD OPERATING CONDITIONS
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS ^{(NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNITS
R₁
R₂
R₃
C₁
C₂
I_LEAK
V_SIG
Resistance 1
Resistance 2
Resistance 3
Capacitance 1
Capacitance 2
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
V_IN=5.0V
I_LOAD = 10mA
90
100 110
Ω
61
68
75
Ω
9
10
11
Ω
38
47
57
pF
80
100 120
pF
1.0
μA
5
7
15
V
-15
-10
-5
V
V_ESD In-system ESD Withstand Voltage
Notes 2,4 and 5
a) Human Body Model, MIL-STD-883,
±15
kV
Method 3015
b) Contact Discharge per IEC 61000-4-2
±8
kV
Level 4
V_CL
Clamping Voltage during ESD Discharge Notes 2,3,4 and 5
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
+15
V
-19
V
f_C1
Cut-off frequency 1; Note 6
f_C2
Cut-off frequency 2; Note 6
f_C3
Cut-off frequency 3; Note 6
R = 100Ω, C = 47pF
R = 68Ω, C = 47pF
R = 10Ω, C = 100pF
53
MHz
61
MHz
33
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input pins with respect to GND, one at a time, pins A2, A3, A4, B1 and B2 only.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin B1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: The parameters are guaranteed by design and characterization.
Note 6: Z_SOURCE=50Ω, Z_LOAD=50Ω.
© 2005 California Micro Devices Corp. All rights reserved.
09/15/05 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ▲ Tel: [phone] ▲ Fax: [phone] ▲ www.calmicro.com 3