PACDN1408C Datasheet, PDF (2/3 Pages) California Micro Devices Corp – ESD PROTECTION ARRAYS, 8 CHANNEL, CHIP SCALE PACKAGE

CALIFORNIA MICRO DEVICES
PACDN1408C
PACDN2408C
PACDN1408C SPECIFICATIONS
(At 25°C unless specified otherwise)
Reverse Stand-off Voltage, I = 10µA
Min
Typ
Max
Unit
5.5
V
Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, 10mA
5.6
6.6
8.0
V
–1.2
–0.8
–0.4
V
In-system ESD withstand voltage*:
Human Body Model (MIL-STD-883D, method 3015
IEC 61000-4-2, contact discharge method
±30
kV
±25
kV
Clamping voltage during ESD discharge
MIL-STD-883D (Method 3015), 8kV
Positive
Negative
12
V
–8
V
Capacitance at 2.5V dc, 1MHz
30
pF
Temperature Range:
Operating
Storage
–40
85
°C
–65
150
* ESD applied between channel pin and ground, one at a time. All other channels are open. All GND pins grounded. This
parameter is guaranteed by design and characterization.
‘GND’ in this document refers to the lower supply voltage.
PACDN2408C SPECIFICATIONS
(At 25°C unless specified otherwise)
Reverse Stand-off Voltage, I = 10µA
Min
Typ
Max
Unit
±5.9
V
Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, 10mA
6.0
7.6
9.2
V
–9.2
–7.6
–6.0
V
In-system ESD withstand voltage*:
Human Body Model (MIL-STD-883D, method 3015
IEC 61000-4-2, contact discharge method
±30
kV
±18
kV
Clamping voltage during ESD discharge
MIL-STD-883D (Method 3015), 8kV
Positive
Negative
14
V
–14
V
Capacitance at 2.5V dc, 1MHz
Temperature Range:
Operating
Storage
30
pF
–40
85
°C
–65
150
* ESD applied between channel pin and common, one at a time. All other channels are open. This parameter is guaranteed by
design and characterization.
©2000 California Micro Devices Corp. All rights reserved.
2
215 Topaz Street, Milpitas, California 95035
Tel: [phone]
Fax: [phone]
www.calmicro.com
6/19/2000