PACDN004 Datasheet, PDF (1/3 Pages) California Micro Devices Corp – 2 CHANNEL ESD PROTECTION ARRAY

CALIFORNIA MICRO DEVICES
PAC DN004
2 CHANNEL ESD PROTECTION ARRAY
Features
• 2-channel ESD protection
• 15KV ESD protection (HBM)
• 8KV contact discharge ESD protection
per IEC 61000-4-2
• Low loading capacitance, 3 pF typ.
• Miniature 4-pin SOT-143 package
Applications
• I/O port: protection for cellular phones,
notebooks computers, PDA, etc.
• ESD protection for sensitive
electronic equipment.
• ESD protection for applications where
low capacitive loading is required.
Product Description
The PAC™ DN004 is a diode array designed to provide two channels of ESD protection for electronic components or sub-
systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (V_P) or negative
(V_N) supply. The PAC™ DN004 will protect against ESD pulses up to 15 KV Human Body Model, and 8KV contact discharge
per International Standard IEC 61000-4-2.
This device has identical characteristics as the PAC™ DN006 (6 channel array). They can be used together in order to provide
a larger number of protected inputs if required. This device is particularly well-suited for portable electronics (e.g. cellular
phones, PDAs, notebook computers) because of its small package footprint, high ESD protection level, and low loading
capacitance. It is also suitable for protecting video output lines and I/O ports in computers and peripheral equipment.
ABSOLUTE MAXIMUM RATINGS
Diode Forward DC Current (Note 1)
20mA
Storage Temperature
-65^°C to 150^°C
Operating Temperature Range
-20°C to 85°C
DC Voltage at any Channel Input V_N-0.5V to V_P+0.5V
Note 1: Only one diode conducting at a time.
SCHEMATIC CONFIGURATION
4 _VP
2
I/O 1
3
I/O 2
1 ^VN
STANDARD SPECIFICATIONS
Parameter
Operating Supply Voltage (V_P - V_N)
Supply Current, (V_P - V_N) = 5.5V, T=25°C
Diode Forward Voltage, I_F = 20mA, T = 25°C
ESD Protection
Peak Discharge Voltage at any Channel Input, in-system (Note 2)
000Human Body Model, Method 3015 (Note 3, 4)
Min.
0.65 V
±15 KV
000Contact Discharge per IEC 61000-4-2 (Note 5)
Channel Clamp Voltage @ 15KV ESD HBM, T = 25°C
(Notes 3, 4)
000Positive transients
000Negative transients
Channel Leakage Current, T = 25°C
±8 KV
Channel Input Capacitance (Measured @ 1 MHz)
V_P = 5V, V_N= 0V, V_IN= 2.5V (Note 4)
Package Power Rating
Typ.
±0.1 µA
3pF
Note 2:
Note 3:
Note 4:
Note 5:
From I/O pins to V_P or V_N only. V_P bypassed to V_N with 0.2 µF ceramic capacitor.
Human Body Model per MIL-STD-883, Method 3015, C_Discharge=100pF, R_Discharge=1.5KΩ, V_P=5.0V, V_N=GND.
This parameter is guaranteed by characterization.
Standard IEC 61000-4-2 with C_Discharge=150pF, and R_Discharge=330Ω, V_P=5V, V_N=GND.
Max.
5.5 V
10 µA
0.95 V
V_P + 13.0 V
V_N- 13.0 V
±1.0 µA
6pF
225mW
©1999 California Micro Devices Corp. All rights reserved.
P/Active^® is a registered trademark and PAC is a trademark of California Micro Devices.
11/99
215 Topaz Street, Milpitas, California 95035
Tel: [phone]
Fax: [phone]
C0280498D
www.calmicro.com
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