BWS-93-120-TS5 Datasheet, PDF (6/8 Pages) Bruckewell Technology LTD – 93mil 120V Trench Schottky Wafer

BWS-B9-80-TS5!
119mil 80V Trench Schottky Wafer
Electrical Characteristics
DIM
DESCRIPTION UM MIL
Ax
Die Size
3,023 119
Ay
Die Size
3,023 119
Bx
Metal Pad
2,819 111
By
Metal Pad
2,819 111
T/min
Thickness/min
279
11
T/max
Thickness/max
279
11
Top Metal
AlSiCu
40KA
Backside Metal TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
3
Gross Die
2818
SYMBOL
VRRM
IFAV
VB MIN
IFSM
TJ
TSTG
DESCRIPTION
DC Blocking Voltage
Average Forward current
Minimum Breakdown Voltage at 1.0mA, 25°C
Nonrepetitive Peak Surge Current-half sine-wave
60hz
Operation Junction Temperature
Storage Temperature
SPEC
80
20
85
320
-55 to +150
-55 to +150
UNIT
Voltage
Amp
Voltage
Amp
°C
°C
Parameters Rating
SYMBOL
VF1
VF2
VF1H
VF2H
IR1
IR1H
DESCRIPTION
Maximum Instantaneous Forward voltage at 5A, 25°C
Maximum Instantaneous Forward voltage at 20A, 25°C
Maximum Instantaneous Forward voltage at 5A, 125°C
Maximum Instantaneous Forward voltage at 20A, 125°C
Maximum Instantaneous Reverse current at VR=120V,
25°C
Maximum Instantaneous Reverse current at VR=120V,
125°C
TYPICAL
0.43
0.58
0.49
22
20
SPEC
0.47
0.63
0.53
100
50
UNIT
V
V
V
V
uA
mA
NOTE
1
2
3
4
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
Data sheet information is subjected to change without notice.
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2014