BWS-93-120-TS5 Datasheet, PDF (5/8 Pages) Bruckewell Technology LTD – 93mil 120V Trench Schottky Wafer

BWS-80-80-TS5!
80mil 80V Trench Schottky Wafer
DIM
DESCRIPTION UM MIL
Ax
Die Size
2,032
80
Ay
Die Size
2,032
80
Bx
Metal Pad
1,828
72
By
Metal Pad
1,828
72
T/min
Thickness/min
228
9
T/max
Thickness/max
280
11
Top Metal
AlSiCu
40KA
Backside Metal TiNiAg
25KA
Wafer Size
6”
Scribe Line
80
3
Gross Die
3799
Electrical Characteristics
SYMBOL
VRRM
IFAV
VB MIN
IFSM
TJ
TSTG
DESCRIPTION
DC Blocking Voltage
Average Forward current
Minimum Breakdown Voltage at 1.0mA, 25°C
Nonrepetitive Peak Surge Current-half sine-wave
60hz
Operation Junction Temperature
Storage Temperature
SPEC
80
5
85
160
-55 to +150
-55 to +150
UNIT
Voltage
Amp
Voltage
Amp
°C
°C
Parameters Rating
SYMBOL
VF1
VF2
VF1H
VF2H
IR1
IR1H
DESCRIPTION
Maximum Instantaneous Forward voltage at 3A, 25°C
Maximum Instantaneous Forward voltage at 5A, 25°C
Maximum Instantaneous Forward voltage at 3A, 125°C
Maximum Instantaneous Forward voltage at 5A, 125°C
Maximum Instantaneous Reverse current at VR=120V,
25°C
Maximum Instantaneous Reverse current at VR=120V,
125°C
TYPICAL
0.46
0.51
0.44
15
10
SPEC
0.49
0.55
0.48
100
50
UNIT
V
V
V
V
uA
mA
NOTE
1
2
3
4
Specification is applied to die only. Actual performance may degrade when assembled. BW does not
guarantee device performance after assembly.
Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months.
Data sheet information is subjected to change without notice.
Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min.
version-A/ 2013