MSW20N60 Datasheet, PDF (3/4 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

Preliminary MSW20N60
500V N-Channel MOSFET
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
I_S
--
I_SM
--
V_SD
I_S = I_F , V_GS = 0 V
--
t_rr
I_S = 20 A , V_GS = 0 V
--
Q_rr
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.0mH, I_AS=20A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦20A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
--
20
A
--
80
--
1.4
V
400
--
ns
5.0
--
uC
Publication Order Number: [MSW20N60]
© Bruckewell Technology Corporation Rev. A -2014