MSW20N60 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

Preliminary MSW20N60
500V N-Channel MOSFET
Description
This latest technology has been especially designed to
minimize on-state resistance, have a high rugged
avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Features
• RDS(on) (Typical 0.26Ω )@VGS=10V
• Gate Charge (Typical 80nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Packing & Order Information
30/Tube ; 540/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
I_DM
E_AS
E_AR
dV/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25°C
T_J,T_STG
Operating and Storage Temperature Range
Value
600
±30
20
12
80
1310
32
4.5
320
2.56
-55 to +150
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MSW20N60]
© Bruckewell Technology Corporation Rev. A -2014