MSW16N50 Datasheet, PDF (3/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSW16N50
500V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
t_d(on)
--
t_r
V_DS = 250 V, I_D = 16 A,
--
t_d(off)
R_G = 25 Ω
--
tf
--
Q_g
--
Q_gs
V_DS = 400 V,I_D = 16 A,
--
V_GS = 10 V
Q_gd
--
C_ISS
--
C_OSS
V_DS = 25 V, V_GS = 0 V,
F = 1.0MHz
--
C_RSS
--
I_S
--
I_SM
--
V_SD
I_S = I_F , V_GS = 0 V
--
t_rr
--
I_S = I_F , diF/dt = 100A/μs
Q_rr
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 7mH, I_AS=16A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦16A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
50
180
130
100
60
14
28
2300
330
35
--
--
--
340
3.4
Max.
115
396
273
220
78
18
36
2990
429
46
16
64
1.5
--
--
Units
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
A
V
ns
uC
Publication Order Number: [MSW16N50]
© Bruckewell Technology Corporation Rev. A -2014