MSW16N50 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MSW16N50
500V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25°C
T_J,T_STG
Operating and Storage Temperature Range
Note:
1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Resistance Characteristics
Symbol
Rthjc
R_θJA
Typical thermal resistance
Parameter
Value
500
±30
16
10
64
896
20.5
205
2.1
-55 to +175
Max.
0.64
40
Unit
V
V
A
A
A
mJ
mJ
W
W/°C
°C
Units
°C/W
Static Characteristics
Symbol
Test Conditions
V_GS
V_DS = V_GS , I_D = 250μA
*R_DS(ON)
V_GS = 10 V , I_D = 8 A
BV_DSS
V_GS = 0 V , I_D=250μA
△BV_DSS /△T_J
I_D = 250μA, Referenced to 25°C
I_DSS
V_DS = 500 V , V_GS = 0 V
V_DS = 400 V , V_GS = 0 V , V_C = 125°C
I_GSS
V_GS = ±30
Min
Typ.
Max. Units
3.0
--
5.0
V
--
0.3
0.38
Ω
500
--
--
V
--
0.5
--
V/°C
--
--
1
uA
10
--
--
±100
nA
Publication Order Number: [MSW16N50]
© Bruckewell Technology Corporation Rev. A -2014