MSU4N60 Datasheet, PDF (3/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

Symbol
Parameter
Source-Drain Diode
VSD
IS
ISM
trr
Qrr
MSU4N60 600V N-Channel MOSFET
Test Conditions
Min
Typ
Max
Units
IS=4.0A, VGS=0V
-
VD=VG=0,
-
-
-
VGS=0, IF=4A, dI/dt=100A/us
-
-
1.4 V
-
4.0 A
-
16 A
270 -
ns
18 -
uC
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
©Bruckewell Technology Corporation Rev. A -2012