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MSU4N60 Datasheet, PDF (2/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET
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Thermal Characteristics
MSU4N60 600V N-Channel MOSFET
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Min.
-
-
Value
Typ.
-
-
Max.
2.8
50.0
°C/W
°C/W
Units
Symbol
Parameter
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/
ΔTJ
VGS(th)
Breakdown Voltage Temperature
coefficient
Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Test Conditions
Min
Typ
Max
Units
VGS = 0 V,
600
-
-V
ID = 250 uA
ID = 250 uA, referenced to 25 °C
-
0.60
- V/°C
VDS = VGS,
ID = 250 uA
VDS = 600 V,
VGS = 0 V
VDS = 480 V,
TC = 125 °C
VGS=±30
2.0
-
4.0 V
-
-
1 uA
-
-
10 uA
-
-
±100 nA
RDS(ON)
Static Drain-Source On-state
Resistance
Dynamic Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge (Miller Charge)
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 10 V,
ID = 2.25 A
ID=4.5A,
VDD=480V,
VGS=10V
ID=4.5A,
VDD=300V,
VGS=10V
RG=25Ω
VGS=0V, VDS=25V, f=1MHz
-
2.0
25 Ω
-
16
-
-
2.5
-
nC
-
6.5
-
-
10
30
-
40
80
ns
-
40
100
-
50
90
-
560
-
-
55
-
pF
-
7
-
©Bruckewell Technology Corporation Rev. A -2012
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