MSQ2N60 Datasheet, PDF (3/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

Preliminary_MSQ2N60
N-Channel Enhancement Mode Power MOSFET
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
I_S
--
I_SM
--
V_SD
I_S = 2 A , V_GS = 0 V
--
t_rr
I_S = 2 A , V_GS = 0 V
--
Q_rr
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L= 19mH, I_AS=2 A, V_DD=50V, R_G=25Ω, Starting TJ =25°C
3. I_SD≤2 A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
--
2
A
--
8
--
1.4
V
230
--
ns
1
--
nC
Publication Order Number: [MSQ2N60]
© Bruckewell Technology Corporation Rev. A -2014