MSQ2N60 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

Preliminary_MSQ2N60
N-Channel Enhancement Mode Power MOSFET
Description
QFN5X6 PACKAGE
The MSQ2N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The QFN-5X6
package which has been designed to achieve very low
on-state resistance providing also one of the
best-in-class figure of merit (FOM)
Features
• 2A, 600V, RDS(on) = 3.90Ω @VGS = 10 V
• Low gate charge ( typical 9 nC)
• High ruggedness
Graphic symbol
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant package
Application
• Ballast
• Inverter
• Switching applications
Packing & Order Information
3,000/Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
600
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
2
A
1.35
A
I_DM
Drain Current Pulsed
8
A
E_AS
Single Pulsed Avalanche Energy
130
mJ
E_AR
Repetitive Avalanche Energy
5.55
mJ
Publication Order Number: [MSQ2N60]
© Bruckewell Technology Corporation Rev. A -2014