MSF9N90 Datasheet, PDF (3/8 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MSF9N90
900V N-Channel MOSFET
Dynamic Characteristics
Symbol Parameter
Test Conditions
Min
t_d(on)
Turn-On Time
--
t_r
Turn-On Time
V_DS = 450 V, I_D = 9 A,
--
t_d(off)
Turn-Off Delay Time
R_G = 25 Ω
--
tf
Turn-Off Fall Time
--
Q_g
Total Gate Charge
--
Q_gs
Gate-Source Charge
V_DS = 720 V,I_D = 10 A,
V_GS = 9 V
--
Q_gd
Gate-Drain Charge
--
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
Min
I_S
Continuous Source-Drain Diode Forward Current
--
I_SM
Pulsed Source-Drain Diode Forward Current
--
V_SD
Source-Drain Diode Forward Voltage I_S = 9 A , V_GS = 0 V
--
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_S = 9 A , V_GS = 0 V
--
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=21mH, I_AS=9.0A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦9.0A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
60
--
ns
130
--
ns
110
--
ns
80
--
ns
47
--
nC
15
--
nC
20
--
nC
Typ.
Max. Units
--
9
A
--
35
--
1.4
V
550
--
ns
6.5
--
μC
Publication Order Number: [MSF9N90]
© Bruckewell Technology Corporation Rev. A -2014