MSF9N90 Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MSF9N90
900V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Power Dissipation (TC = 25 °C)
P_D
Power Dissipation (TC = 100 °C)
Maximum lead temperature for soldering purposes,
T_L
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_θJc
Junction-to-Case
R_θJA
Junction-to-Ambient
Parameter
Value
280
2.22
300
Unit
W
W/°C
°C
Max.
3.5
62.5
Units
°C/W
On Characteristics
Symbol Parameter
V_GS
Gate Threshold Voltage
R_DS(ON)
Static Drain-Source On-Resistance
Test Conditions
V_DS = V_GS , I_D = 250μA
V_GS = 10 V , I_D = 4.5 A
Min
Typ.
Max. Units
3.0
--
5.0
V
--
1.1
1.4
Ω
Off Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown
V_GS = 0 V , I_D=250μA
900
Voltage
△BV_{DSS Breakdown Voltage}
/△T_J
Temperature Coefficient
I_D = 250μA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain
Current
V_DS = 900 V , V_GS = 0 V
V_DS = 720 V , V_C = 125°C
--
Gate-Body Leakage
I_GSSF
Current, Forward
V_GS = 30 V , V_DS = 0 V
--
I_GSSR
Gate-Body Leakage
Current, Reverse
V_GS = -30 V , V_DS = 0 V
--
Dynamic Characteristics
Symbol Parameter
Test Conditions
Min
C_ISS
Input Capacitance
--
C_OSS
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
F = 1.0MHz
--
C_RSS
Reverse Transfer Capacitance
--
Typ.
Max. Units
--
--
V
1.05
--
V/°C
--
10
μA
100
--
100
nA
--
-100
nA
Typ.
2200
180
15
Max.
--
--
--
Units
pF
pF
pF
Publication Order Number: [MSF9N90]
© Bruckewell Technology Corporation Rev. A -2014