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MSF5N60 Datasheet, PDF (3/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET
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MSF5N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr
Turn-On Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 300 V, ID = 4.5 A,
RG = 10 Ω , VGS = 10 V
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Source-Drain Diode
Symbol Parameter
IS
ISM
Test Conditions
VD = VG = 0
VS = 1.3 V
VSD
IS = 4.5 A , VGS = 0 V
trr
IF= 4.5 A , VGS = 0 V
Qrr
diF/dt=100A/μs
Notes;
1. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
Min
Typ.
Max. Units
--
9.6
--
ns
--
12.2
--
ns
--
22.3
--
ns
--
14.8
--
ns
--
700
--
pF
--
86
--
pF
--
20
--
pF
Min
Typ.
Max. Units
--
--
4.5
A
--
--
18
--
--
1.5
V
--
320
--
ns
--
2.7
--
μC
Publication Order Number: [MSF5N60]
© Bruckewell Technology Corporation Rev. A -2014
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