MSF5N60 Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MSF5N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Maximum lead temperature for soldering purposes,
T_L
1/8'' from case for 5 seconds
TPKG
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25°C)
P_D
Derating Factor above 25 °C
T_STG
Operating and Storage Temperature Range
T_J
Storage Temperature
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I_AS=4.5A, V_DD=50V, L=7mH, V_G=10V, Starting T_J=25℃
3. I_SD≦4.5A, di/dt≦100A/μs,V_DD≦BV_DSS, Starting T_J=25℃
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
Value
300
260
33
0.26
-55 to +150
150
Max.
3.75
62.5
Unit
°C
°C
W
W/°C
°C
°C
Units
°C/W
Static Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown
V_GS = 0 V , I_D = 250μA
600
Voltage
△BV_{DSS Breakdown Voltage}
I_D = 250μA, Referenced to 25°C
--
/△T_J
Temperature Coefficient
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS,I_D = 250μA
2.0
I_DSS
Zero Gate Voltage Drain
V_DS = 600 V , V_GS = 0 V
--
Current
V_DS = 480 V , T_C = 125°C
Gate-Body Leakage
I_GSS
Forward
V_GS = ±30
--
Static Drain-Source
R_DS(ON)
On-Resistance
V_GS = 10 V,I_D = 3.0 A
--
Typ.
Max. Units
--
--
V
0.6
--
V/°C
--
4.0
V
--
1
μA
10
--
±100
nA
1.8
2.3
Ω
Dynamic Characteristics
Symbol Parameter
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DS = 300 V,I_D = 4.5 A,
V_GS = 10 V
Min
Typ.
Max. Units
--
16
--
nC
--
3.3
--
nC
--
6.2
--
nC
Publication Order Number: [MSF5N60]
© Bruckewell Technology Corporation Rev. A -2014