MSF10N65 Datasheet, PDF (3/7 Pages) Bruckewell Technology LTD – 650V N-Channel MOSFET

MSF10N65
650V N-Channel MOSFET
Dynamic Characteristics
Symbol Parameter
t_d(on)
Turn-On Time
t_r
Turn-On Time
t_d(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DS=450 V, I_D=6A,
R_G=25Ω
V_DS=720V,I_D=6A,
V_GS=10 V
Min
Typ.
Max. Units
--
40
80
ns
--
120
240
ns
--
60
120
ns
--
70
140
ns
--
33
45
nC
--
10
--
nC
--
13
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
Min
I_S
Continuous Source-Drain Diode Forward Current
--
I_SM
ISM Pulsed Source-Drain Diode Forward Current
--
V_SD
Source-Drain Diode Forward Voltage I_S=6A , V_GS= 0V
--
t_rr
Reverse Recovery Time
I_S=6A , V_GS= 0V
--
Q_rr
Reverse Recovery Charge
diF/dt=100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=34mH, I_AS=6A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦6A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
--
6.0
A
--
24.0
--
1.4
V
780
--
ns
9.0
--
μC
Publication Order Number: [MSF10N65]
© Bruckewell Technology Corporation Rev. A -2014