MSF10N65 Datasheet, PDF (2/7 Pages) Bruckewell Technology LTD – 650V N-Channel MOSFET

MSF10N65
650V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Power Dissipation (TC = 25 °C)
P_D
Power Dissipation (TC=100°C)
T_J,T_STG
Operating and Storage Temperature Range
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=13mH, IAS=10.0A,VDD=50V, RG=25Ω,Starting TJ=25˚C
3. ISD ≤ 10.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating temperature
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient
Value
52
0.42
-55 to +150
Unit
W
W/°C
°C
Max.
2.25
62.5
Units
°C/W
On Characteristics
Symbol Parameter
V_GS
Gate Threshold Voltage
R_DS(ON)
Static Drain-Source On-Resistance
Test Conditions
V_DS=V_GS,I_D=250μA
V_GS=10V,I_D=3A
Min
Typ.
Max. Units
3.0
--
5.0
V
--
1.95
2.4
Ω
Off Characteristics
Symbol Parameter
Test Conditions
Min
Typ.
Max. Units
BV_DSS
Drain-Source Breakdown
Voltage
V_GS=0 V , I_D=250μA
900
--
△BV_{DSS Breakdown Voltage}
I_D=250μA, Referenced to 25°C
--
1.03
/△T_J
Temperature Coefficient
--
V
--
V/°C
I_DSS
I_GSSF
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Current, Forward
V_DS=900V , V_GS= 0 V
V_DS=720V , T_C= 125°C
V_GS=30V , V_DS=0 V
--
--
10
μA
100
--
--
100
nA
I_GSSR
Gate-Body Leakage
Current, Reverse
V_GS=-30V , V_DS=0 V
--
--
-100
nA
Dynamic Characteristics
Symbol Parameter
C_ISS
Input Capacitance
C_OSS
Output Capacitance
C_RSS
Reverse Transfer Capacitance
Test Conditions
V_DS=25V, V_GS=0V,
f=1.0MHz
Min
Typ.
Max. Units
--
1500
2010
pF
--
145
190
pF
--
15
20
pF
Publication Order Number: [MSF10N65]
© Bruckewell Technology Corporation Rev. A -2014