MSC39N02X Datasheet, PDF (3/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSC39N02X
30V N-Channel MOSFETs
Static State Characteristics
Symbol Parameter
EAS
Single Pulse Avalanche Energy
Test Conditions
V_DD=25V, L=0.1mH, I_AS=30A
Min Typ. Max. Units
45
mJ
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter
Test Conditions
Min
Typ. Max. Units
I_S
Continuous Source Current
--
--
130
A
I_SM
Pulsed Source Current³
V_G = V_D = 0 V , Force Current
--
--
260
A
V_SD
Diode Forward Voltage³
V_GS = 0 V , I_S = 1 A , TJ = 25°C
--
--
1
V
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=25V,VGS=10V,L=1mH,IAS=70A.,RG=25Ω,Starting TJ=25℃.
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSC39N02X]
© Bruckewell Technology Corporation Rev. A -2016