MSC39N02X Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSC39N02X
30V N-Channel MOSFETs
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
IAS
Single Pulse Avalanched Current²
Power Dissipation (T_C=25°C)
P_D
Power Dissipation - Derate above 25°C
T_J
Operating Junction Temperature Range
T_STG
Storage Temperature Range
Value
70
166
1.33
-55 to +175
-55 to +175
Unit
A
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_ΘjA
Thermal Resistance Junction to ambient
R_θJC
Thermal Resistance Junction to Case
Typ.
--
--
Max.
62
0.9
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Static State Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown Voltage _{VGS = VGS, ID = 250uA}
30
I_GSS
Gate-Source Leakage Current
V_DS = 0 V , V_GS = ±20 V
I_DSS
R_DS(on)
V_GS(th)
Drain-Source Leakage Current
Drain-Source On-Resistance
Gate Threshold Voltage
V_DS = 27 V , V_GS = 0 V , T_J= 25°C
V_DS = 24 V , V_GS = 0 V , T_J= 125°C
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V , I_D = 15 A
V_DS = V_GS, I_D =-250μA
1
g_fs
Forward Tranconductance
V_DS = 10 V , I_D = 15 A
Typ.
1.2
1.8
1.6
30
Max.
±100
1
10
1.6
2.4
2.5
Units
V
nA
uA
mΩ
V
S
Dynamic Characteristics
Symbol Parameter
Test Conditions
Min
Q_g
Total Gate Charge^3,4
--
Q_gs
Gate-Source Charge^3,4
V_DS = 15 V , I_D = 10 A,
V_GS = 4.5 V
--
Q_gd
Gate-Drain Charge^3,4
--
C_ISS
Input Capacitance
--
C_OSS
Output Capacitance
V_DS = 25 V
f = 1 MHz , V_GS = 0 V
--
C_RSS
Reverse Transfer Capacitance
--
Rg
Total Gate Charge
t_d(on)
Turn-On Delay Time^3,4
V_DS = 0 V , f = 1 MHz , V_GS = 0 V
--
--
t_r
Rise Time^3,4
I_D = 10 A , R_G = 10 Ω,
--
t_d(off)
Turn-Off Delay Time^3,4
V_GS = 10 V , V_DD = 20 V
--
tf
Fall Time^3,4
--
Typ.
65
16
21
7720
945
435
1.2
24.6
62.8
224
162
Max.
120
30
40
11000
1400
650
2.4
48
120
440
320
Units
nC
nC
nC
pF
pF
pF
Ω
ns
ns
ns
ns
Publication Order Number: [MSC39N02X]
© Bruckewell Technology Corporation Rev. A -2016