MSF7N65 Datasheet, PDF (2/9 Pages) Bruckewell Technology LTD – Simple Drive Requirement

Thermal Characteristics
MSF7N65 650V N-Channel MOSFET
Symbol
Parameter
Min.
Value
Typ.
Max.
Units
R_θJC
Thermal Resistance, Junction-to-Case
-
R_θJA
Thermal Resistance, Junction-to-Ambient
-
Electrical Characteristics ( T_C = 25 °C unless otherwise noted )
-
2.6
-
62.5
°C/W
°C/W
Symbol
Parameter
Test Conditions
Static Characteristics
BV_DSS
ΔBV_DSS/
ΔT_J
V_GS(th)
I_DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
V_GS = 0 V,
I_D = 250 uA
I_D = 250 uA, referenced to 25
°C
Gate Threshold Voltage
V_DS = V_GS,
I_D = 250 uA
Drain-Source Leakage Current
V_DS = 650 V,
V_GS = 0 V
V_DS = 520 V,
T_C = 125 °C
I_GSS
Gate-Source Leakage, Forward VGS=±30
Min
Typ
Max
Units
650
-
-
V
-
0.70
-
V/°C
2.0
-
4.0
V
-
-
1
uA
-
-
10
uA
-
-
±100
nA
R_DS(ON)
Static Drain-Source On-state
Resistance
Dynamic Characteristics
V_GS = 10 V,
I_D = 3.5 A
-
1.2
1.4
Ω
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge (Miller
Charge)
ID=7A,
VDD=520V,
VGS=10V
-
29
-
-
4.7
-
nC
-
12.5
-
t_d(on)
Turn-on Delay Time
ID=7A,
-
20
-
t_r
Rise Time
t_d(off)
Turn-off Delay Time
VDD=325V,
VGS=10V
-
50
-
ns
-
80
-
t_f
Fall Time
RG=10Ω
-
70
-
C_iss
Input Capacitance
-
1482
-
C_oss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
-
121.7
-
pF
C_rss
Reverse Transfer Capacitance
-
14
-
©Bruckewell Technology Corporation Rev. A -2012