MSF7N65 Datasheet, PDF (1/9 Pages) Bruckewell Technology LTD – Simple Drive Requirement

MSF7N65 650V N-Channel MOSFET
GENERAL DESCRIPTION
The MSF7N65 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-220F package is
universally preferred for all commercial-industrial applications
FEATURES
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available
Symbol
Parameter
V_DSS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current(@T_C = 25 °C)
Continuous Drain Current(@T_C = 100 °C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T_L
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
TPKG Maximum Temperature for Soldering @ Package Body for 10
seconds
P_D
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
T_STG
T_J
Operating Junction Temperature
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C.
3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value
650
±30
7.0
4.2
28
230
7.0
14.7
4.5
300
260
48
0.38
-55 ~ 150
150
Units
V
V
A
A
A
mJ
A
mJ
V/ns
°C
°C
W
W/°C
°C
°C
©Bruckewell Technology Corporation Rev. A -2012