MSF4N65 Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – 650V N-Channel MOSFET

MSF4N65
650V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
P_D
Derating Factor above 25 °C
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
•Drain current limited by maximum junction temperature
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient
Value
3.6
5.5
33
0.26
-55 to +150
300
Unit
mJ
V/ns
W
W/°C
°C
°C
Max.
3.3
62.5
Units
°C/W
On Characteristics
Symbol Parameter
Test Conditions
Min
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS,I_D = 250μA
2.0
R_DS(ON)
Static Drain-Source
V_GS = 10 V,I_D = 3.0 A
--
On-Resistance
Off Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown
V_GS = 0 V , I_D = 250μA
600
Voltage
△BV_{DSS Breakdown Voltage}
I_D = 250μA, Referenced to 25°C
--
/△T_J
Temperature Coefficient
I_DSS
Zero Gate Voltage Drain
V_DS = 600 V , V_GS = 0 V
--
Current
V_DS = 480 V , T_C = 125°C
I_GSSF
Gate-Body Leakage
Current, Forward
V_GS = 30 V , V_DS = 0 V
--
I_GSSR
Gate-Body Leakage
Current, Reverse
V_GS = -30 V , V_DS = 0 V
--
Dynamic Characteristics
Symbol Parameter
Test Conditions
Min
C_ISS
Input Capacitance
--
C_OSS
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0MHz
--
C_RSS
Reverse Transfer Capacitance
--
Typ.
Max. Units
--
4.0
V
2.0
2.5
Ω
Typ.
Max. Units
710
--
V
0.6
--
V/°C
--
1
μA
10
--
100
nA
--
-100
nA
Typ.
Max. Units
545
710
pF
60
80
pF
8
11
pF
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014