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MSF4N65 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 650V N-Channel MOSFET | |||
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MSF4N65
650V N-Channel MOSFET
Description
The MSF4N65 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
⢠Originative New Design
⢠100% EAS Test
⢠Rugged Gate Oxide Technology
⢠Extremely Low Intrinsic Capacitances
⢠Remarkable Switching Characteristics
⢠Unequalled Gate Charge: 15 nC (Typ.)
⢠Extended Safe Operating Area
⢠Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V
Application
⢠Low power battery chargers
⢠Switch mode power supply (SMPS)
⢠DC-AC converters
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
4.0
A
2.3
A
IDM
Drain Current Pulsed
14.4
A
IAR
Avalanche Current
4.5
A
EAS
Single Pulsed Avalanche Energy
240
mJ
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014
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