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MSD6N70 Datasheet, PDF (2/9 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET
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MSD6N70 700V N-Channel MOSFET
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
-
RθJA
Thermal Resistance, Junction-to-Ambient
-
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
-
2.6
-
62.5
°C/W
°C/W
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V,
ID = 250 uA
ΔBVDSS/
ΔTJ
VGS(th)
Breakdown Voltage Temperature ID = 250 uA, referenced to 25
coefficient
°C
Gate Threshold Voltage
VDS = VGS,
ID = 250 uA
IDSS
Drain-Source Leakage Current VDS = 700 V,
VGS = 0 V
VDS = 560 V,
TC = 125 °C
IGSS
Gate-Source Leakage, Forward VGS=±30
Min
Typ
Max
Units
700
-
-
V
-
0.70
-
V/°C
2.0
-
4.0
V
-
-
1
uA
-
-
10
uA
-
-
±100
nA
RDS(ON)
Static Drain-Source On-state
Resistance
Dynamic Characteristics
VGS = 10 V,
ID = 3.0 A
-
1.2
1.5
Ω
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge (Miller
Charge)
ID=6A,
VDD=560V,
VGS=10V
-
29
-
-
4.7
-
nC
-
12.5
-
td(on)
Turn-on Delay Time
ID=6A,
-
20
-
tr
Rise Time
td(off)
Turn-off Delay Time
VDD=350V,
VGS=10V
-
50
-
ns
-
80
-
tf
Fall Time
RG=10Ω
-
70
-
Ciss
Input Capacitance
-
1482
-
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
-
121.7
-
pF
Crss
Reverse Transfer Capacitance
-
14
-
©Bruckewell Technology Corporation Rev. A -2012
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