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MSD6N70 Datasheet, PDF (1/9 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET | |||
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MSD6N70 700V N-Channel MOSFET
GENERAL DESCRIPTION
The MSD6N70 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-252 package is
universally preferred for all commercial-industrial applications
FEATURES
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant / Halogen free package available
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TL
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
TPKG Maximum Temperature for Soldering @ Package Body for 10
seconds
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSTG
TJ
Operating Junction Temperature
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IASâ¤6A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C.
3. ISDâ¤6A, dI/dtâ¤200A/μs, VDDâ¤BVDSS, starting TJ=+25°C.
Value
700
±30
6.0
4.8
28
230
7.0
14.7
4.5
300
260
48
0.38
-55 ~ 150
150
Units
V
V
A
A
A
mJ
A
mJ
V/ns
°C
°C
W
W/°C
°C
°C
©Bruckewell Technology Corporation Rev. A -2012
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