BS62LV4000 Datasheet, PDF (6/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 512K X 8 bit

BSI
BS62LV4000
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0^oC to + 70^oC , Vcc = 3.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
t_AVAX
PARAMETER
NAME
t_WC
DESCRIPTION
Write Cycle Time
t
E1LWH
t
CW
Chip Select to End of Write
t
AVWL
t
AS
Address Set up Time
t_AVWH
t_AW
Address Valid to End of Write
t_WLWH
t_WP
Write Pulse Width
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
t
WLOZ
t
WHZ
Write to Output in High Z
t
DVWH
t
DW
Data to Write Time Overlap
t
WHDX
t
DH
Data Hold from Write Time
t_GHOZ
t_OHZ
Output Disable to Output in High Z
t_WHQX
t_OW
Endot Write to Output Active
BS62LV4000-70
MIN. TYP. MAX.
70 --
--
70 --
--
0
--
--
70 --
--
50 --
--
0
--
--
0
-- 30
35 --
--
0
--
--
0
-- 30
5
--
--
BS62LV4000-10
MIN. TYP. MAX.
100 --
--
100 --
--
0
--
--
100 --
--
70 --
--
0
--
--
0
-- 40
40 --
--
0
--
--
0
-- 40
10 --
--
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 ⁽¹⁾
t WC
ADDRESS
OE
CE
WE
D _OUT
D _IN
t AS
(4,10)
t OHZ
(5)
t AW
(11)
t CW
t WP
(2)
t DW
(3)
t WR
t DH
R0201-BS62LV4000
6
Revision 2.2
April. 2001