BS616UV1610 Datasheet, PDF (3/10 Pages) Brilliance Semiconductor – Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

BSI
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70^oC )
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
VIL
Guaranteed Input Low
Voltage⁽²⁾
VIH
Guaranteed Input High
Voltage⁽²⁾
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
Vcc=2V
Vcc=2V
IOL
Output Leakage Current
Vcc = Max, CE1 = VIH , or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 1mA
Vcc=2V
BS616UV1610
MIN. TYP. ⁽¹⁾ MAX.
UNITS
-0.5
--
0.6
V
1.4
--
Vcc+0.2
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -0.5mA
Vcc=2V
1.6
--
--
V
ICC
Operating Power Supply Vcc= max, CE1 = VIL and CE2 =
Current
VIH, IDQ = 0mA, F = Fmax⁽³⁾
Vcc=2V
--
--
25
mA
ICCSB
Standby Current-TTL
Vcc= max, CE1 = VIH or CE2 =
VIL, IDQ = 0mA
Vcc=2V
--
--
0.8
mA
Vcc= max,CE1 Њ Vcc-0.2V, or
ICCSB1
Standby Current-CMOS CE2 Љ 0.2V, V IN Њ Vcc - 0.2V ^Vcc=2V
--
1.2
30
uA
or VIN Љ 0.2V
1. Typical characteristics are at TA = 25^oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t_RC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70^oC )
SYMBOL
PARAMETER
TEST CONDITIONS
V_DR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2Љ0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
I_CCDR
t_CDR
t_R
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE1 Њ Vcc - 0.2V or CE2Љ0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
1. Vcc = 1.5V, T_A = + 25^OC
2. t_RC = Read Cycle Time
„ LOW V_CC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
MIN. TYP. ⁽¹⁾ MAX.
1.5
--
--
--
0.8
15
0
--
--
T_RC ⁽²⁾
--
--
UNITS
V
uA
ns
ns
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1≥ Vcc - 0.2V
„ LOW V_CC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
tR
VIH
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR Њ 1.5V
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616UV1610
3
Revision 2.2
April 2001