BS62LV4006_08 Datasheet, PDF (12/12 Pages) Brilliance Semiconductor – Very Low Power CMOS SRAM 512K X 8 bit

„ Revision History
Revision No. History
1.2
To add Icc1 characteristic parameter
To improve Iccsb1 spec.
I-grade from 60uA to 20uA at 5.0V
10uA to 4.0uA at 3.0V
C-grade from 30uA to 10uA at 5.0V
5.0uA to 2.0uA at 3.0V
1.3
To Add 400 mil TSOP II package type
1.4
Change I-grade operation temperature range
- from –25^OC to –40^OC
1.5
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
Remove BGA Package
BS62LV4006
Draft Date
Jan. 13, 2006
Remark
March 20, 2006
May. 25, 2006
Oct. 31, 2008
R0201-BS62LV4006
12
Revision 1.5
Oct.
2008