BS62LV4006_08 Datasheet, PDF (1/12 Pages) Brilliance Semiconductor – Very Low Power CMOS SRAM 512K X 8 bit

Very Low Power CMOS SRAM
512K X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV4006
„ FEATURES
y Wide V_CC operation voltage : 2.4V ~ 5.5V
y Very low power consumption :
V_CC = 3.0V Operation current : 30mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 2/4uA (Max.) at 70/85 ^OC
V_CC = 5.0V Operation current : 70mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 10/20uA (Max.) at 70/85^OC
y High speed access time :
-55
55ns (Max.) at V_CC=3.0~5.5V
-70
70ns (Max.) at V_CC=2.7~5.5V
y Automatic power down when chip is deselected
y Easy expansion with CE and OE options
y Three state outputs and TTL compatible
y Fully static operation
y Data retention supply voltage as low as 1.5V
„ POWER CONSUMPTION
„ DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 4/20uA at Vcc=3V/5V at 85^OC and maximum access time
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV4006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 600mil Plastic DIP, 400 mil TSOP II,
8mmx13.4mm STSOP and 8mmx20mm TSOP package.
PRODUCT
FAMILY
OPERATING
STANDBY
TEMPERATURE
(I_CCSB1, Max)
V_CC=5.0V V_CC=3.0V
BS62LV4006DC
BS62LV4006EC
BS62LV4006PC
BS62LV4006SC
BS62LV4006STC
BS62LV4006TC
BS62LV4006EI
BS62LV4006PI
BS62LV4006SI
BS62LV4006STI
BS62LV4006TI
Commercial
+0^OC to +70^OC
Industrial
-40^OC to +85^OC
10uA
20uA
2.0uA
4.0uA
POWER DISSIPATION
1MHz
V_CC=5V
10MHz
Operating
(I_CC, Max)
f_Max.
1MHz
9mA 43mA 68mA 1.5mA
10mA 45mA 70mA 2mA
V_CC=3V
10MHz
18mA
20mA
PKG TYPE
f_Max.
29mA
30mA
DICE
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
„ PIN CONFIGURATIONS
A11 1
A9 2
A8 3
A13 4
WE 5
A17 6
A15 7
VCC 8
A18 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
BS62LV4006TC
BS62LV4006TI
BS62LV4006STC
BS62LV4006STI
32 OE
31 A10
30 CE
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 GND
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1_•
32
2
31
3
30
4
29
5
28
6
27
7 _BS62LV4006EC 26
8 BS62LV4006EI 25
9 ^BS62LV4006SC 24
10
BS62LV4006SI
BS62LV4006PC
23
11 _BS62LV4006PI 22
12
21
13
20
14
19
15
18
16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
„ BLOCK DIAGRAM
A12
A14
A16
A18
A15
A17
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
VCC
GND
Address
10
Input
Buffer
Row
Decoder
1024
Memory Array
1024 x 4096
8
8
Control
Data
Input
8
Buffer
Data
8
Output
Buffer
4096
Column I/O
Write Driver
Sense Amp
256
Column Decoder
9
Address Input Buffer
A7 A6 A5 A4 A3 A2 A1 A0 A0
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS62LV4006
1
Revision 1.5
Oct.
2008