BS62LV256_08 Datasheet, PDF (10/10 Pages) Brilliance Semiconductor – Very Low Power CMOS SRAM 32K X 8 bit

„ Revision History
Revision No. History
2.4
Add Icc1 characteristic parameter
2.5
Change I-grade operation temperature range
- from –25^OC to –40^OC
2.6
Revised I_CCSB1 sepc.
- from 1.0uA to 4.0uA for 5V C-grade
- from 2.0uA to 5.0uA for 5V I-grade
- from 0.2uA to 0.4uA for 3V C-grade
- from 0.4uA to 0.7uA for 3V I-grade
Revised I_CCDR sepc.
- from 0.2uA to 0.4uA for C-grade
- from 0.4uA to 0.7uA for I-grade
2.7
Revised I_CCDR sepc.
- from 0.7uA to 0.4uA for I-grade
- from 0.4uA to 0.3uA for C-grade
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
BS62LV256
Draft Date
Jan. 13, 2006
May. 25, 2006
Sep. 05, 2006
Remark
Oct. 31, 2008
R0201-BS62LV256
10
Revision 2.7
Oct.
2008