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| BH616UV1611_08 Datasheet, PDF (10/10 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit | |||
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 Revision History
Revision No. History
1.0
Initial Production Version
- E3 pin is NC pin
1.1
Change -55 55ns(Max.) at VCC=1.65~3.6V to
55ns(Max.) at VCC=3.0V and 70ns(Max.) at
VCC=1.8V
Typical value of standby current is replaced by
maximum value in Featues section
Remove â-: Normalâ (Leaded) PKG Material in
ordering information
BH616UV1611
Draft Date
May 10,2006
Oct. 31, 2008
Remark
Initial
R0201-BH616UV1611
10
Revision 1.1
Oct.
2008
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