BH616UV1611_08 Datasheet, PDF (1/10 Pages) Brilliance Semiconductor – Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BH616UV1611
„ FEATURES
y Wide V_CC low operation voltage : 1.65V ~ 3.6V
y Ultra low power consumption :
V_CC = 3.6V Operation current : 12mA (Max.)at 55ns
2mA (Max.) at 1MHz
Standby current : 30uA (Max.) at 3.6V/85^OC
V_CC = 1.2V Data retention current : 15uA(Max.) at 85^OC
y High speed access time :
-55/-70
55ns (Max.) at V_CC=3.0V
70ns (Max.) at V_CC=1.8V
y Automatic power down when chip is deselected
y Easy expansion with CE1, CE2 and OE options
y I/O Configuration x8/x16 selectable by LB and UB pin.
y Three state outputs and TTL compatible
y Fully static operation, no clock, no refresh
y Data retention supply voltage as low as 1.0V
„ DESCRIPTION
The BH616UV1611 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum standby current of
39uA at 3.6V/85^OC and maximum access time of 55/70ns at
3.0V/1.8V.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1611 is made with two chips of 8Mbit SRAM by
stacked multi-chip-package.
The BH616UV1611 is available in 48-ball BGA package.
„ POWER CONSUMPTION
POWER DISSIPATION
PRODUCT OPERATING
STANDBY
Operating
FAMILY
TEMPERATURE
(I_CCSB1, Max)
(I_CC, Max)
V_CC=3.6V V_CC=1.8V
1MHz
V_CC=3.6V
10MHz
f_Max.
V_CC=1.8V
1MHz 10MHz
f_Max.
PKG TYPE
BH616UV1611AI
Industrial
-40^OC to +85^OC
30uA
25uA
2mA
6mA 12mA 1.5mA 5mA
8mA BGA-48-0608
„ PIN CONFIGURATIONS
1
2
3
4
5
6
A
LB OE A0 A1 A2 CE2
B
DQ8 UB A3 A4 CE1 DQ0
C
DQ9 DQ10 A5 A6 DQ1 DQ2
D
VSS DQ11 A17 A7 DQ3 VCC
E
VCC DQ12 NC A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 A19 A12 A13 WE DQ7
H
A18 A8 A9 A10 A11 NC
48-ball BGA top view
„ BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
DQ0
.
.
.
.
.
.
DQ15
CE2, CE1
WE
OE
UB
LB
VCC
VSS
Address
10
Input
Buffer
.
16
.
.
.
16
.
.
Control
Row
Decoder
1024
Memory Array
1024 x 16384
Data
Input
Buffer
Data
Output
Buffer
16
16
16384
Column I/O
Write Driver
Sense Amp
1024
Column Decoder
10
Address Input Buffer
A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV1611
1
Revision 1.1
Oct.
2008