BS616UV1010_06 Datasheet, PDF (1/11 Pages) Brilliance Semiconductor – Ultra Low Power CMOS SRAM 64K X 16 bit

Ultra Low Power CMOS SRAM
64K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV1010
n FEATURES
Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 2.0V Operation current : 15mA (Max.) at 100ns
1.0mA (Max.)at 1MHz
Standby current : 0.01uA (Typ.)at 25 ^OC
VCC = 3.0V Operation current : 20mA (Max.) at 100ns
2.0mA (Max.)at 1MHz
Standby current : 0.02uA (Typ.)at 25^OC
Ÿ High speed access time :
-10
100ns (Max.)
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
n POWER CONSUMPTION
n DESCRIPTION
The BS616UV1010 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 1.9V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.01uA at 2.0V/25^OC and maximum access time of 100ns
at 2.0V/85^OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV1010 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
PRODUCT
OPERATING
FAMILY
TEMPERATURE
BS616UV1010DC
BS616UV1010AC
BS616UV1010EC
BS616UV1010AI
BS616UV1010EI
Commercial
+0^OC to +70^OC
Industrial
-40^OC to +85^OC
STANDBY
(ICCSB1, Max)
VCC=3.0V
VCC=2.0V
1.0uA
0.5uA
1.5uA
1.0uA
POWER DISSIPATION
Operating
(ICC, Max)
VCC=3.0V
VCC=2.0V
1MHz
fMax.
1MHz
fMax.
1.5mA
18mA
0.8mA
13mA
2.0mA
20mA
1.0mA
15mA
PKG TYPE
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
n PIN CONFIGURATIONS
n BLOCK DIAGRAM
A4 1
A3 2
A2 3
A1 4
A0 5
CE 6
DQ0 7
DQ1 8
DQ2 9
DQ3 10
VCC 11
VSS 12
DQ4 13
DQ5 14
DQ6 15
DQ7 16
WE 17
A15 18
A14 19
A13 20
A12 21
NC 22
44
43
42
41
40
39
38
37
36
35
BS616UV1010EC 34
BS616UV1010EI ³³
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
LB OE A0 A1 A2 NC
B
D8 UB A3 A4 CE D0
C
D9 D10 A5 A6 D1 D2
D VSS D11 NC A7 D3 VCC
E VCC D12 NC NC D4 VSS
F
D14 D13 A14 A15 D5 D6
G D15 NC A12 A13 WE D7
H
NC A8 A9 A10 A11 NC
A8
A13
A15
A14
A12
A7
A6
A5
A4
DQ0
.
.
.
.
.
.
DQ15
CE
WE
OE
UB
LB
VCC
VSS
Address
9
Input
Buffer
16
.
.
.
.
16
.
.
Control
512
Row
Decoder
Memory Array
512 x 2048
Data
Input
16
Buffer
Data
16
Output
Buffer
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
7
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616UV1010
1
Revision 2.6
May.
2006