BDX53 Datasheet, PDF (3/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A.,45-100V,60W)

BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
40000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS120AG
T_C = -40°C
T_C = 25°C
T_C = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
t_p = 300 µs, duty cycle < 2%
TCS120AH
I_B = I_C / 100
2·5
2·0
1000
V_CE = 3 V
t_p = 300 µs, duty cycle < 2%
100
0·5
1·0
I_C - Collector Current - A
Figure 1.
1·5
1·0
0·5
0
10
0·5
1·0
T_C = -40°C
T_C = 25°C
T_C = 100°C
10
I_C - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AI
3·0
T_C = -40°C
T_C = 25°C
2·5 ^{TC = 100°C}
2·0
1·5
1·0
I_B = I_C / 100
t_p = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3