BDX53 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A.,45-100V,60W)

BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDX53
45
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = 100 mA I_B = 0
(see Note 3)
BDX53A
60
BDX53B
80
BDX53C
100
I_CEO
Collector-emitter
cut-off current
I_CBO
Collector cut-off
current
Emitter cut-off
I_{EBO current}
V_CE = 30 V
V_CE = 30 V
V_CE = 40 V
V_CE = 50 V
V_CB = 45 V
V_CB = 60 V
V_CB = 80 V
V_CB = 100 V
V_EB = 5 V
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_C = 0
BDX53
0.5
BDX53A
0.5
BDX53B
0.5
BDX53C
0.5
BDX53
0.2
BDX53A
0.2
BDX53B
0.2
BDX53C
0.2
2
Forward current
h_FE
transfer ratio
V_CE = 3 V
I_C = 3 A
(see Notes 3 and 4)
750
Base-emitter
V_{BE(sat) saturation voltage}
I_B = 12 mA I_C = 3 A
(see Notes 3 and 4)
2.5
Collector-emitter
V_{CE(sat) saturation voltage}
I_B = 12 mA I_C = 3 A
(see Notes 3 and 4)
2
Parallel diode
V_{EC forward voltage}
I_E = 3 A
I_B = 0
2.5
NOTES: 3. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on Turn-on time
t_off
Turn-off time
I_C = 3 A
V_BE(off) = -4.5 V
I_B(on) = 12 mA
R_L = 10 Ω
I_B(off) = -12 mA
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.